NTB5412NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V

Terminal Position :

Single

Power Dissipation-Max :

125W Tc

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

3.22pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.014Ohm

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Pulsed Drain Current-Max (IDM) :

155A

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Pin Count :

3

Drain Current-Max (Abs) (ID) :

60A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Vgs (Max) :

±20V

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

180 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE