NTB5605P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

122ns

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

235

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

140m Ω @ 8.5A, 5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

75 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V

Current Rating :

-18.5A

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Packaging :

Tube

Drain to Source Breakdown Voltage :

-60V

Published :

2008

Number of Pins :

3

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e0

Power Dissipation :

88W

Drain-source On Resistance-Max :

0.14Ohm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

17A

Pulsed Drain Current-Max (IDM) :

55A

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

18.5A Ta

Power Dissipation-Max :

88W Tc

Lead Free :

Contains Lead

Voltage - Rated DC :

-60V

Turn-Off Delay Time :

29 ns

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

18.5A

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3