NTB5605P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Voltage - Rated DC :

-60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

FET Type :

P-Channel

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

140m Ω @ 8.5A, 5V

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Terminal Finish :

Tin/Lead (Sn/Pb)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Terminal Form :

Gull wing

Rise Time :

122ns

Drain to Source Voltage (Vdss) :

60V

Continuous Drain Current (ID) :

18.5A

Pin Count :

3

Power Dissipation-Max :

88W Tc

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

18.5A Ta

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

-60V

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

235

Number of Terminations :

2

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

88W

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Published :

2008

Turn-Off Delay Time :

29 ns

Fall Time (Typ) :

75 ns

Drain Current-Max (Abs) (ID) :

17A

Pulsed Drain Current-Max (IDM) :

55A

Element Configuration :

Single

Drain-source On Resistance-Max :

0.14Ohm

Transistor Element Material :

SILICON

Current Rating :

-18.5A

Packaging :

Tube