NTB5605P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

55A

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Case Connection :

DRAIN

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain Current-Max (Abs) (ID) :

17A

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn/Pb)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Power Dissipation-Max :

88W Tc

Peak Reflow Temperature (Cel) :

235

Fall Time (Typ) :

75 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V

Published :

2008

Voltage - Rated DC :

-60V

Packaging :

Tube

Current Rating :

-18.5A

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Continuous Drain Current (ID) :

18.5A

Number of Terminations :

2

Pin Count :

3

Turn-Off Delay Time :

29 ns

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-60V

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Rds On (Max) @ Id, Vgs :

140m Ω @ 8.5A, 5V

Current - Continuous Drain (Id) @ 25°C :

18.5A Ta

ECCN Code :

EAR99

Power Dissipation :

88W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.14Ohm

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Rise Time :

122ns