NTB5605PT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.65mm

Pulsed Drain Current-Max (IDM) :

55A

Case Connection :

DRAIN

Rise Time :

122ns

Rds On (Max) @ Id, Vgs :

140m Ω @ 8.5A, 5V

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Power Dissipation :

88W

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

18.5A Ta

REACH SVHC :

No SVHC

Voltage - Rated DC :

-60V

Vgs (Max) :

±20V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

18.5A

JESD-609 Code :

e3

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

-1.5V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Factory Lead Time :

7 Weeks

Drain to Source Breakdown Voltage :

-60V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Current Rating :

-18.5A

Turn-Off Delay Time :

29 ns

Radiation Hardening :

No

Fall Time (Typ) :

75 ns

Drain to Source Voltage (Vdss) :

60V

Length :

10.29mm

Power Dissipation-Max :

88W Tc

ECCN Code :

EAR99

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

5V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Height :

4.83mm

Turn On Delay Time :

12.5 ns

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Published :

2005

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V