NTB52N10G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Power Dissipation-Max :

2W Ta 178W Tc

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

100 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

95ns

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

800 mJ

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Number of Pins :

3

Continuous Drain Current (ID) :

52A

Power Dissipation :

178W

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

74 ns

RoHS Status :

RoHS Compliant

Current Rating :

52A

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Number of Elements :

1

JESD-609 Code :

e3

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

Pbfree Code :

yes

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Published :

2002

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

ECCN Code :

EAR99

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

FET Type :

N-Channel

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

30m Ω @ 26A, 10V

Pin Count :

3

Voltage - Rated DC :

100V