NTB5411NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

280 mJ

Pin Count :

3

Transistor Application :

SWITCHING

Rise Time :

122ns

Mount :

Surface Mount

Fall Time (Typ) :

113 ns

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Turn-Off Delay Time :

116 ns

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

80A

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

166W Tc

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Power Dissipation :

166W

Published :

2008

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V