NTB52N10T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

100V

Turn-Off Delay Time :

74 ns

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Pin Count :

3

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Power Dissipation :

178W

Pbfree Code :

yes

Published :

2005

Drain to Source Breakdown Voltage :

100V

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Fall Time (Typ) :

100 ns

FET Type :

N-Channel

Power Dissipation-Max :

2W Ta 178W Tc

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Rise Time :

95ns

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

52A

Element Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Current Rating :

52A

Avalanche Energy Rating (Eas) :

800 mJ

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Number of Terminations :

2

Case Connection :

DRAIN

Mount :

Surface Mount

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

30m Ω @ 26A, 10V