NTB27N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e0

Pbfree Code :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

80A

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

48m Ω @ 13.5A, 5V

Avalanche Energy Rating (Eas) :

94 mJ

Terminal Finish :

TIN LEAD

Power Dissipation-Max :

88.2W Tc

Surface Mount :

yes

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Pin Count :

3

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.048Ohm

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

27A Ta

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

27A

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V

DS Breakdown Voltage-Min :

60V

Vgs (Max) :

±15V