NTB27N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

80A

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.048Ohm

Pin Count :

3

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

94 mJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V

DS Breakdown Voltage-Min :

60V

Power Dissipation-Max :

88.2W Tc

Current - Continuous Drain (Id) @ 25°C :

27A Ta

Drain Current-Max (Abs) (ID) :

27A

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Pbfree Code :

No

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Terminal Finish :

TIN LEAD

Vgs (Max) :

±15V

Qualification Status :

COMMERCIAL

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

48m Ω @ 13.5A, 5V

Configuration :

SINGLE WITH BUILT-IN DIODE