NTB22N06T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

60m Ω @ 11A, 10V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Number of Terminations :

2

Power Dissipation-Max :

60W Tj

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Drain-source On Resistance-Max :

0.06Ohm

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

66A

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Terminal Form :

Gull wing

Pin Count :

3

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

22A

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

yes

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

TIN LEAD

Avalanche Energy Rating (Eas) :

72 mJ

Number of Elements :

1