NTB25P06T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation :

120W

Current Rating :

-25A

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Turn-Off Delay Time :

43 ns

Contact Plating :

Tin

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

yes

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Width :

9.65mm

Pin Count :

3

Voltage - Rated DC :

-60V

Number of Terminations :

2

Vgs (Max) :

±15V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

JESD-609 Code :

e3

Length :

10.29mm

Avalanche Energy Rating (Eas) :

600 mJ

Polarity/Channel Type :

N-Channel

Rise Time :

72ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

82m Ω @ 25A, 10V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

ECCN Code :

EAR99

Element Configuration :

Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

27.5A Ta

Number of Elements :

1

Power Dissipation-Max :

120W Tj

Pulsed Drain Current-Max (IDM) :

80A

Fall Time (Typ) :

190 ns

Height :

4.83mm

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

7 Weeks

Turn On Delay Time :

14 ns

Drain-source On Resistance-Max :

0.082Ohm

Drain to Source Breakdown Voltage :

-60V

Continuous Drain Current (ID) :

27.5A

Published :

2012

Gate to Source Voltage (Vgs) :

15V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V