NTB22N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

22A Ta

DS Breakdown Voltage-Min :

60V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

22A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

60W Tj

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

72 mJ

Drain-source On Resistance-Max :

0.065Ohm

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

66A

Terminal Finish :

TIN LEAD

Pin Count :

3

JESD-609 Code :

e0

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Pbfree Code :

No

Rds On (Max) @ Id, Vgs :

65m Ω @ 11A, 5V

Terminal Position :

Single

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing