NTB22N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs (Max) :

±10V

Drain Current-Max (Abs) (ID) :

22A

Vgs(th) (Max) @ Id :

2V @ 250μA

DS Breakdown Voltage-Min :

60V

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

60W Tj

Pbfree Code :

No

Terminal Finish :

TIN LEAD

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

65m Ω @ 11A, 5V

Number of Terminations :

2

Drain-source On Resistance-Max :

0.065Ohm

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

66A

Terminal Form :

Gull wing

Pin Count :

3

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

72 mJ

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V