NTB22N06LT4
- Mfr.Part #
- NTB22N06LT4
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 22A D2PAK
- Stock
- 14,981
- In Stock :
- 14,981
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- TIN LEAD
- Drain Current-Max (Abs) (ID) :
- 22A
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 72 mJ
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 66A
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.065Ohm
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drain to Source Voltage (Vdss) :
- 60V
- Power Dissipation-Max :
- 60W Tj
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- RoHS Status :
- Non-RoHS Compliant
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 11A, 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Vgs (Max) :
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 690pF @ 25V
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- No
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- NTB22N06LT4
NTB22N06LT4 Documents

N-Channel Tape & Reel (TR) 65m Ω @ 11A, 5V ±10V 690pF @ 25V 20nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB22N06LT4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 72 mJ.A device's maximal input capacitance is 690pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 22A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 66A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V).
NTB22N06LT4 Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 66A.
a 60V drain to source voltage (Vdss)
NTB22N06LT4 Applications
There are a lot of Rochester Electronics, LLC
NTB22N06LT4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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