NTB25P06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

245

Pulsed Drain Current-Max (IDM) :

80A

Fall Time (Typ) :

190 ns

Avalanche Energy Rating (Eas) :

600 mJ

Mounting Type :

Surface Mount

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

82m Ω @ 25A, 10V

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.082Ohm

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

120W

Transistor Element Material :

SILICON

Vgs (Max) :

±15V

Polarity/Channel Type :

N-Channel

FET Type :

P-Channel

Lead Free :

Lead Free

Number of Elements :

1

RoHS Status :

RoHS Compliant

Current Rating :

27.5A

Turn-Off Delay Time :

43 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

25A

Number of Terminations :

2

Rise Time :

72ns

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Pin Count :

3

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

-60V

Continuous Drain Current (ID) :

27.5A

Power Dissipation-Max :

120W Tj

Current - Continuous Drain (Id) @ 25°C :

27.5A Ta

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

15V

Voltage - Rated DC :

60V

Terminal Form :

Gull wing