NTB25P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Number of Terminations :

2

Drain-source On Resistance-Max :

0.082Ohm

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1.68pF @ 25V

Power Dissipation-Max :

120W Tj

Vgs (Max) :

±15V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Terminal Finish :

TIN LEAD

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

27.5A

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

225

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

27.5A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

82m Ω @ 25A, 10V

Pulsed Drain Current-Max (IDM) :

80A

JESD-609 Code :

e0

Terminal Position :

Single

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

60V

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

600 mJ

Operating Mode :

ENHANCEMENT MODE