NTB22N06L
- Mfr.Part #
- NTB22N06L
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 42,942
- In Stock :
- 42,942
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 72 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e0
- Qualification Status :
- COMMERCIAL
- Reach Compliance Code :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta
- Pin Count :
- 3
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- Non-RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drain Current-Max (Abs) (ID) :
- 22A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.065Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Pbfree Code :
- No
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 11A, 5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- TIN LEAD
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 66A
- DS Breakdown Voltage-Min :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 690pF @ 25V
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±10V
- Power Dissipation-Max :
- 60W Tj
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- NTB22N06L

N-Channel Tape & Reel (TR) 65m Ω @ 11A, 5V ±10V 690pF @ 25V 20nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB22N06LT4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 72 mJ.A device's maximal input capacitance is 690pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 22A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 66A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V).
NTB22N06LT4 Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 66A.
a 60V drain to source voltage (Vdss)
NTB22N06LT4 Applications
There are a lot of Rochester Electronics, LLC
NTB22N06LT4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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