NTB23N03RG
- Mfr.Part #
- NTB23N03RG
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 23A D2PAK
- Stock
- 18,383
- In Stock :
- 18,383
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 37.5W Tj
- Pin Count :
- 3
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 25V
- Terminal Position :
- Single
- Qualification Status :
- COMMERCIAL
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 6A, 10V
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain-source On Resistance-Max :
- 0.06Ohm
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 6A
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 60A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Terminal Finish :
- MATTE TIN
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 3.76nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 225pF @ 20V
- Peak Reflow Temperature (Cel) :
- 265
- Packaging :
- Tube
- Terminal Form :
- Gull wing
- Datasheets
- NTB23N03RG

N-Channel Tube 45m Ω @ 6A, 10V ±20V 225pF @ 20V 3.76nC @ 4.5V 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB23N03RG Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 225pF @ 20V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
NTB23N03RG Features
based on its rated peak drain current 60A.
a 25V drain to source voltage (Vdss)
NTB23N03RG Applications
There are a lot of Rochester Electronics, LLC
NTB23N03RG applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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