NSV1C301ET4G
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- Mfr.Part #
- NSV1C301ET4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A DPAK
- Stock
- 1,582
- In Stock ：
- 1,582
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Halogen Free :
- Halogen Free
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 100V
- Series :
- Automotive, AEC-Q101
- Factory Lead Time :
- 8 Weeks
- Continuous Collector Current :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Max Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 100V
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 115mV
- Published :
- 1997
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- hFE Min :
- 120
- Operating Temperature :
- -65°C~150°C TJ
- Power Dissipation :
- 1.4W
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300mA, 3A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 140V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 2.1W
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Gain Bandwidth Product :
- 120MHz
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 120MHz
- Radiation Hardening :
- No
- Datasheets
- NSV1C301ET4G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NSV1C301ET4G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 115mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 300mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 3A volts.
NSV1C301ET4G Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 250mV @ 300mA, 3A
the emitter base voltage is kept at 6V
NSV1C301ET4G Applications
There are a lot of ON Semiconductor
NSV1C301ET4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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