NSV1C201LT1G
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- Mfr.Part #
- NSV1C201LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A SOT23-3
- Stock
- 270,519
- In Stock ：
- 270,519
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 140V
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 30mV
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 110MHz
- Halogen Free :
- Halogen Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 150mV
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Transition Frequency :
- 110MHz
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Reference Standard :
- AEC-Q101
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Max Collector Current :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 200mA, 2A
- Continuous Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 490mW
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Published :
- 2001
- Max Breakdown Voltage :
- 100V
- Datasheets
- NSV1C201LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSV1C201LT1G Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 30mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 200mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
NSV1C201LT1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 150mV @ 200mA, 2A
a transition frequency of 110MHz
NSV1C201LT1G Applications
There are a lot of ON Semiconductor
NSV1C201LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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