NSV1C300ET4G-VF01

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Mfr.Part #
NSV1C300ET4G-VF01
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 100V 3A DPAK
Stock
3,713
In Stock :
3,713

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Power - Max :
2.1W
Frequency - Transition :
100MHz
Series :
Automotive, AEC-Q101
Pbfree Code :
yes
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Voltage - Collector Emitter Breakdown (Max) :
100V
Factory Lead Time :
8 Weeks
Published :
2013
Reach Compliance Code :
not_compliant
Operating Temperature :
-65°C~150°C TJ
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Vce Saturation (Max) @ Ib, Ic :
400mV @ 300mA, 3A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Case Connection :
COLLECTOR
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 500mA 2V
Number of Elements :
1
Transistor Type :
PNP
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Current - Collector (Ic) (Max) :
3A
Polarity/Channel Type :
PNP
JESD-30 Code :
R-PSSO-G2
Surface Mount :
yes
Terminal Form :
Gull wing
Transition Frequency :
100MHz
Configuration :
Single
Number of Terminations :
2
Terminal Finish :
Tin (Sn)
Datasheets
NSV1C300ET4G-VF01
Introducing Transistors - Bipolar (BJT) - Single onsemi NSV1C300ET4G-VF01 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Terminations:2, NSV1C300ET4G-VF01 pinout, NSV1C300ET4G-VF01 datasheet PDF, NSV1C300ET4G-VF01 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSV1C300ET4G-VF01 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSV1C300ET4G-VF01


PNP -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NSV1C300ET4G-VF01 Overview


This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.

NSV1C300ET4G-VF01 Features


the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 400mV @ 300mA, 3A
a transition frequency of 100MHz


NSV1C300ET4G-VF01 Applications


There are a lot of ON Semiconductor
NSV1C300ET4G-VF01 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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