NSV1C300ET4G-VF01
- Mfr.Part #
- NSV1C300ET4G-VF01
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 3,713
- In Stock :
- 3,713
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Power - Max :
- 2.1W
- Frequency - Transition :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Factory Lead Time :
- 8 Weeks
- Published :
- 2013
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 300mA, 3A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Number of Elements :
- 1
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Current - Collector (Ic) (Max) :
- 3A
- Polarity/Channel Type :
- PNP
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Configuration :
- Single
- Number of Terminations :
- 2
- Terminal Finish :
- Tin (Sn)
- Datasheets
- NSV1C300ET4G-VF01

PNP -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NSV1C300ET4G-VF01 Overview
This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
NSV1C300ET4G-VF01 Features
the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 400mV @ 300mA, 3A
a transition frequency of 100MHz
NSV1C300ET4G-VF01 Applications
There are a lot of ON Semiconductor
NSV1C300ET4G-VF01 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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