NSV1C301ET4G-VF01

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Mfr.Part #
NSV1C301ET4G-VF01
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 100V 3A DPAK
Stock
712
In Stock :
712

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Power - Max :
2.1W
Number of Terminations :
2
Polarity/Channel Type :
NPN
Transistor Type :
NPN
Terminal Form :
Gull wing
Transition Frequency :
120MHz
Frequency - Transition :
120MHz
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Collector (Ic) (Max) :
3A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-65°C~150°C TJ
Transistor Element Material :
SILICON
Voltage - Collector Emitter Breakdown (Max) :
100V
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1A 2V
Mounting Type :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Case Connection :
COLLECTOR
Current - Collector Cutoff (Max) :
100nA ICBO
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300mA, 3A
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PSSO-G2
RoHS Status :
ROHS3 Compliant
Surface Mount :
yes
Terminal Position :
Single
Configuration :
Single
Pbfree Code :
yes
Factory Lead Time :
8 Weeks
Reference Standard :
AEC-Q101
Published :
1997
Datasheets
NSV1C301ET4G-VF01
Introducing Transistors - Bipolar (BJT) - Single onsemi NSV1C301ET4G-VF01 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, NSV1C301ET4G-VF01 pinout, NSV1C301ET4G-VF01 datasheet PDF, NSV1C301ET4G-VF01 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSV1C301ET4G-VF01 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSV1C301ET4G-VF01


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NSV1C301ET4G-VF01 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 300mA, 3A.The part has a transition frequency of 120MHz.Device displays Collector Emitter Breakdown (100V maximal voltage).

NSV1C301ET4G-VF01 Features


the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 250mV @ 300mA, 3A
a transition frequency of 120MHz


NSV1C301ET4G-VF01 Applications


There are a lot of ON Semiconductor
NSV1C301ET4G-VF01 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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