NSV12100UW3TCG
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- Mfr.Part #
- NSV12100UW3TCG
- Manufacturer
- onsemi
- Package / Case
- 3-WDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 12V 1A 3WDFN
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Frequency - Transition :
- 200MHz
- Vce Saturation (Max) @ Ib, Ic :
- 440mV @ 100mA, 1A
- Package / Case :
- 3-WDFN Exposed Pad
- Pbfree Code :
- yes
- Factory Lead Time :
- 8 Weeks
- Published :
- 2008
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 740mW
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NSV12100UW3TCG
PNP -55°C~150°C TJ 100nA ICBO 3-WDFN Exposed Pad Tape & Reel (TR) Surface Mount
NSV12100UW3TCG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 440mV @ 100mA, 1A.Device displays Collector Emitter Breakdown (12V maximal voltage).
NSV12100UW3TCG Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 440mV @ 100mA, 1A
NSV12100UW3TCG Applications
There are a lot of ON Semiconductor
NSV12100UW3TCG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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