NSV1C300ET4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 300mA, 3A

Collector Emitter Voltage (VCEO) :

100V

Published :

2013

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

33W

Surface Mount :

yes

Continuous Collector Current :

3A

Mounting Type :

Surface Mount

Width :

6.22mm

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP

Length :

6.73mm

Collector Emitter Breakdown Voltage :

100V

Gain Bandwidth Product :

100MHz

Power - Max :

2.1W

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

Number of Pins :

3

Max Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity/Channel Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Factory Lead Time :

22 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

2.38mm

Collector Base Voltage (VCBO) :

140V

Pin Count :

3

Collector Emitter Saturation Voltage :

-400mV

JESD-609 Code :

e3

Max Collector Current :

3A

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Emitter Base Voltage (VEBO) :

6V

hFE Min :

120

Radiation Hardening :

No

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Element Configuration :

Single

Max Breakdown Voltage :

100V