MS1076
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- Mfr.Part #
- MS1076
- Manufacturer
- Microsemi
- Package / Case
- M174
- Datasheet
- Download
- Description
- RF TRANS NPN 35V 30MHZ M174
- Stock
- 18,603
- In Stock ：
- 18,603
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Power - Max :
- 320W
- Published :
- 2003
- Max Operating Temperature :
- 200°C
- Package / Case :
- M174
- Voltage - Collector Emitter Breakdown (Max) :
- 35V
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Mount :
- Chassis Mount, Screw
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 70V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 7A 5V
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 35V
- Collector Emitter Voltage (VCEO) :
- 35V
- Max Collector Current :
- 16A
- Current - Collector (Ic) (Max) :
- 16A
- Supplier Device Package :
- M174
- Mounting Type :
- Chassis Mount
- Packaging :
- Bulk
- Frequency - Transition :
- 30MHz
- Transistor Type :
- NPN
- Max Power Dissipation :
- 320W
- Min Operating Temperature :
- -65°C
- Gain :
- 12dB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 200°C TJ
- Datasheets
- MS1076
MS1076 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available at
MS1076 Description
MS1076 developed by Microsemi Corporation is a type of 28-volt epitaxial NPN silicon planar transistor. It is specifically designed for SSB and VHF communications. Maximum ruggedness and reliability can be achieved based on an emitter-ballasted die geometry. Using planar structure and technology, very delicate and complex electrode patterns can be produced, thus opening up a broad way for transistors to develop in the direction of high frequency and high power.
MS1076 Features
Common emitter configuration
Device current: 16A
Power dissipation: 250W
Junction temperature: -65℃~150℃
MS1076 Applications
SSB and VHF communications
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