MS1003
- Mfr.Part #
- MS1003
- Manufacturer
- Microsemi
- Package / Case
- M111
- Datasheet
- Download
- Description
- RF TRANS NPN 18V 175MHZ M111
- Stock
- 1,597
- In Stock :
- 1,597
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Frequency - Transition :
- 136MHz~175MHz
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Lifecycle Status :
- Obsolete (Last Updated: 1 month ago)
- Terminal Finish :
- TIN LEAD
- Mounting Type :
- Surface Mount
- Published :
- 2004
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Forward Current :
- 10A
- Peak Non-Repetitive Surge Current :
- 225A
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 5A 5V
- Number of Terminations :
- 6
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 20A
- Pin Count :
- 3
- Radiation Hardening :
- No
- Operating Temperature :
- 200°C TJ
- Package / Case :
- M111
- Number of Elements :
- 1
- Highest Frequency Band :
- VERY HIGH FREQUENCY B
- Terminal Position :
- UNSPECIFIED
- Mount :
- Surface Mount, Through Hole
- Pbfree Code :
- No
- Peak Reverse Current :
- 250μA
- Transistor Application :
- AMPLIFIER
- Packaging :
- Bulk
- Additional Feature :
- WITH EMITTER BALLASTED RESISTORS
- Max Power Dissipation :
- 270W
- ECCN Code :
- EAR99
- JESD-30 Code :
- O-PXFM-F6
- Power - Max :
- 270W
- Gain :
- 6dB
- Collector-Base Capacitance-Max :
- 390pF
- Max Repetitive Reverse Voltage (Vrrm) :
- 30V
- Collector Emitter Breakdown Voltage :
- 18V
- Terminal Form :
- Flat
- Element Configuration :
- Common Cathode
- Datasheets
- MS1003
MS1003 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available at
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