MS1007

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Configuration :

Single

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

Number of Pins :

4

RoHS Status :

RoHS Compliant

Package / Case :

M174

Number of Elements :

1

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Collector-Base Capacitance-Max :

220pF

Operating Temperature :

200°C TJ

Highest Frequency Band :

HIGH FREQUENCY B

Terminal Form :

Flat

Output Power :

150W

Collector Emitter Breakdown Voltage :

55V

Mount :

Chassis Mount, Screw

JESD-609 Code :

e0

Max Collector Current :

10A

Collector Emitter Voltage (VCEO) :

55V

Transistor Type :

NPN

Lead Free :

Lead Free

Mounting Type :

Chassis Mount

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Max Frequency :

30MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

18 @ 1.4A 6V

Collector Base Voltage (VCBO) :

110V

Gain :

14dB

ECCN Code :

EAR99

Max Power Dissipation :

233W

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Frequency - Transition :

30MHz

Terminal Finish :

TIN LEAD

Published :

2003

Polarity/Channel Type :

NPN

Pin Count :

4

Pbfree Code :

No

Packaging :

Bulk

Terminal Position :

Radial