MS1001

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Terminal Position :

Radial

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Frequency - Transition :

30MHz

Power - Max :

270W

Collector Base Voltage (VCBO) :

36V

Polarity/Channel Type :

NPN

Configuration :

Single

JESD-609 Code :

e0

Number of Terminations :

4

Transistor Element Material :

SILICON

Additional Feature :

WITH DIFFUSED EMITTER RESISTORS

Package / Case :

M174

ECCN Code :

EAR99

Highest Frequency Band :

HIGH FREQUENCY B

Radiation Hardening :

No

Number of Pins :

4

Collector Emitter Voltage (VCEO) :

18V

Packaging :

Bulk

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5A 5V

Operating Temperature :

200°C TJ

Collector Emitter Breakdown Voltage :

18V

RoHS Status :

RoHS Compliant

Gain :

13dB

Mount :

Chassis Mount, Screw

Pin Count :

4

Published :

2003

Max Power Dissipation :

270W

Mounting Type :

Chassis Mount

Transistor Application :

AMPLIFIER

Pbfree Code :

No

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Terminal Finish :

TIN LEAD

Max Collector Current :

20A