MMBTH24

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

hFE Min :

30

Transition Frequency :

400MHz

Published :

2002

Max Collector Current :

50mA

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

30V

Terminal Form :

Gull wing

Height :

930μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 8mA 10V

Emitter Base Voltage (VEBO) :

4V

Lead Free :

Lead Free

Length :

2.92mm

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

30

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Terminal Position :

Dual

Gain Bandwidth Product :

400MHz

Mount :

Surface Mount

Polarity/Channel Type :

NPN

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN

Voltage - Rated DC :

30V

Current Rating :

50mA

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

30V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

30V

Max Power Dissipation :

225mW

Frequency :

400MHz

Radiation Hardening :

No

Weight :

30mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Base Part Number :

MMBTH24

Continuous Collector Current :

50mA

Transistor Application :

AMPLIFIER

Factory Lead Time :

7 Weeks

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Collector Base Voltage (VCBO) :

40V

Width :

1.3mm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

225mW

JESD-609 Code :

e3