MMBT5179

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain :

15dB

Max Breakdown Voltage :

12V

Power Dissipation :

225mW

Lead Free :

Lead Free

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Frequency :

2GHz

hFE Min :

25

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Terminal Position :

Dual

Transistor Type :

NPN

Element Configuration :

Single

Gain Bandwidth Product :

2 GHz

Emitter Base Voltage (VEBO) :

2.5V

Mounting Type :

Surface Mount

Published :

2001

VCEsat-Max :

0.4 V

Height :

930μm

Length :

2.92mm

Transistor Element Material :

SILICON

Weight :

30mg

Voltage - Rated DC :

12V

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Continuous Collector Current :

50mA

Factory Lead Time :

42 Weeks

Collector Emitter Voltage (VCEO) :

12V

Transition Frequency :

900MHz

Collector Emitter Breakdown Voltage :

12V

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

5dB @ 200MHz

Mount :

Surface Mount

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

20V

Pbfree Code :

yes

Max Collector Current :

50mA

Width :

1.3mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 3mA 1V

Base Part Number :

MMBT5179

Number of Terminations :

3

Number of Elements :

1

ECCN Code :

EAR99

Max Power Dissipation :

225mW

Current Rating :

50mA