MMBT5179

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Lead Free :

Lead Free

Width :

1.3mm

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Max Power Dissipation :

225mW

Emitter Base Voltage (VEBO) :

2.5V

Noise Figure (dB Typ @ f) :

5dB @ 200MHz

Base Part Number :

MMBT5179

Collector Emitter Breakdown Voltage :

12V

Transistor Type :

NPN

Height :

930μm

Max Breakdown Voltage :

12V

Factory Lead Time :

42 Weeks

Collector Emitter Voltage (VCEO) :

12V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Terminal Form :

Gull wing

Terminal Position :

Dual

Length :

2.92mm

Collector Base Voltage (VCBO) :

20V

ECCN Code :

EAR99

Power Dissipation :

225mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

hFE Min :

25

Gain Bandwidth Product :

2 GHz

Continuous Collector Current :

50mA

Polarity/Channel Type :

NPN

Gain :

15dB

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Frequency :

2GHz

Transition Frequency :

900MHz

Operating Temperature :

-55°C~150°C TJ

VCEsat-Max :

0.4 V

Voltage - Rated DC :

12V

Number of Elements :

1

Weight :

30mg

Number of Pins :

3

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Current Rating :

50mA

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 3mA 1V

Published :

2001

Max Collector Current :

50mA