MJD128T4
- Mfr.Part #
- MJD128T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 8A DPAK
- Stock
- 19,248
- In Stock :
- 19,248
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Current Rating :
- -8A
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Saturation Voltage :
- 2V
- Frequency - Transition :
- 4MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 120V
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 120V
- Peak Reflow Temperature (Cel) :
- 260
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- Max Collector Current :
- 8A
- Voltage - Rated DC :
- -120V
- Power Dissipation :
- 1.75W
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Collector Cutoff (Max) :
- 5mA
- Height :
- 2.38mm
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- PNP
- Transistor Type :
- PNP - Darlington
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Number of Terminations :
- 2
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 1.75W
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Length :
- 6.73mm
- Case Connection :
- COLLECTOR
- Width :
- 6.22mm
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Datasheets
- MJD128T4

PNP - Darlington -65°C~150°C TJ 5mA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD128T4G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 4A 4V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 4V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -8A.A maximum collector current of 8A volts can be achieved.
MJD128T4G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
MJD128T4G Applications
There are a lot of ON Semiconductor
MJD128T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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