MJD128T4

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Mfr.Part #
MJD128T4
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP DARL 120V 8A DPAK
Stock
19,248
In Stock :
19,248

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2007
Current Rating :
-8A
Element Configuration :
Single
ECCN Code :
EAR99
Terminal Form :
Gull wing
Factory Lead Time :
8 Weeks
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Saturation Voltage :
2V
Frequency - Transition :
4MHz
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
120V
Packaging :
Tape and Reel (TR)
Collector Base Voltage (VCBO) :
120V
Peak Reflow Temperature (Cel) :
260
Halogen Free :
Halogen Free
Radiation Hardening :
No
Max Collector Current :
8A
Voltage - Rated DC :
-120V
Power Dissipation :
1.75W
JESD-609 Code :
e3
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
120V
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Current - Collector Cutoff (Max) :
5mA
Height :
2.38mm
Vce Saturation (Max) @ Ib, Ic :
4V @ 80mA, 8A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity :
PNP
Transistor Type :
PNP - Darlington
REACH SVHC :
No SVHC
Pin Count :
3
Number of Terminations :
2
Operating Temperature :
-65°C~150°C TJ
Transistor Application :
SWITCHING
Surface Mount :
yes
JESD-30 Code :
R-PSSO-G2
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 4A 4V
Emitter Base Voltage (VEBO) :
5V
Time@Peak Reflow Temperature-Max (s) :
40
Max Power Dissipation :
1.75W
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
Length :
6.73mm
Case Connection :
COLLECTOR
Width :
6.22mm
Mounting Type :
Surface Mount
Pbfree Code :
yes
Datasheets
MJD128T4
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD128T4 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Number of Terminations:2, Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, MJD128T4 pinout, MJD128T4 datasheet PDF, MJD128T4 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD128T4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD128T4


PNP - Darlington -65°C~150°C TJ 5mA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD128T4G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 4A 4V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 4V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -8A.A maximum collector current of 8A volts can be achieved.

MJD128T4G Features


the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A


MJD128T4G Applications


There are a lot of ON Semiconductor
MJD128T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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