MJD112G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Collector Base Voltage (VCBO) :

100V

Transistor Element Material :

SILICON

Width :

6.22mm

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

20μA

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

100V

Length :

6.73mm

Max Power Dissipation :

1.75W

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

Surface Mount :

yes

Packaging :

Tube

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

2V

Frequency - Transition :

25MHz

Published :

2005

Polarity :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Type :

NPN - Darlington

Base Part Number :

MJD112

Max Collector Current :

2A

ECCN Code :

EAR99

Operating Temperature :

-65°C~150°C TJ

Power Dissipation :

1.75W

Collector Emitter Voltage (VCEO) :

100V

hFE Min :

1000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

100V

Mounting Type :

Surface Mount

Contact Plating :

Tin

Factory Lead Time :

8 Weeks

Current Rating :

2A

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Height :

2.38mm

Pin Count :

3

Transition Frequency :

25MHz

Element Configuration :

Single

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

5V

Continuous Collector Current :

2A

Halogen Free :

Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Number of Terminations :

2

Radiation Hardening :

No