MJD112TF
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- Mfr.Part #
- MJD112TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A DPAK
- Stock
- 6,238
- In Stock ：
- 6,238
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Published :
- 2013
- Max Collector Current :
- 2A
- Number of Terminations :
- 2
- Current Rating :
- 2A
- Current - Collector Cutoff (Max) :
- 20μA
- Power Dissipation :
- 1.75W
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Collector Emitter Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Width :
- 6.1mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 25MHz
- Collector Emitter Saturation Voltage :
- 2V
- Height :
- 2.3mm
- Weight :
- 260.37mg
- hFE Min :
- 1000
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 6.6mm
- Max Power Dissipation :
- 1.75W
- Max Breakdown Voltage :
- 100V
- Transistor Type :
- NPN - Darlington
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- MJD112
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Transition Frequency :
- 25MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 100V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity :
- NPN
- RoHS Status :
- RoHS Compliant
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 100V
- Datasheets
- MJD112TF
NPN - Darlington 150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD112TF Overview
In this device, the DC current gain is 1000 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 4A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MJD112TF Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz
MJD112TF Applications
There are a lot of ON Semiconductor
MJD112TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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