MJD112T4G
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- Mfr.Part #
- MJD112T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A DPAK
- Stock
- 220
- In Stock ：
- 220
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Voltage - Rated DC :
- 100V
- Base Part Number :
- MJD112
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 2.38mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 20W
- Continuous Collector Current :
- 2A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Frequency - Transition :
- 25MHz
- Transition Frequency :
- 25MHz
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Max Collector Current :
- 2A
- Collector Emitter Saturation Voltage :
- 2V
- Transistor Application :
- SWITCHING
- Halogen Free :
- Halogen Free
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Length :
- 6.73mm
- Current - Collector Cutoff (Max) :
- 20μA
- Current Rating :
- 2A
- Max Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6.22mm
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Base Voltage (VCBO) :
- 100V
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Transistor Type :
- NPN - Darlington
- Datasheets
- MJD112T4G
NPN - Darlington -65°C~150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD112T4G Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
MJD112T4G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz
MJD112T4G Applications
There are a lot of ON Semiconductor
MJD112T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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