MJD112T4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Current - Collector (Ic) (Max) :

2A

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Collector Cutoff (Max) :

20μA

Factory Lead Time :

8 Weeks

Operating Temperature :

150°C TJ

Power - Max :

20W

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

ECCN Code :

EAR99

Transistor Type :

NPN - Darlington

Transistor Element Material :

SILICON

Number of Terminations :

2

Case Connection :

COLLECTOR

Power Dissipation-Max (Abs) :

20W

Voltage - Collector Emitter Breakdown (Max) :

100V

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Base Part Number :

MJD112

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Pin Count :

3

Power Dissipation Ambient-Max :

20W

Frequency - Transition :

25MHz

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

VCEsat-Max :

3 V

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP