MJD112RLG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Pin Count :

3

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

2V

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

100V

Height :

2.38mm

Max Collector Current :

2A

Element Configuration :

Single

Width :

6.22mm

Max Breakdown Voltage :

100V

Current Rating :

2A

Operating Temperature :

-65°C~150°C TJ

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

100V

Base Part Number :

MJD112

Collector Base Voltage (VCBO) :

100V

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

100V

Max Power Dissipation :

1.75W

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Transition Frequency :

25MHz

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Continuous Collector Current :

2A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Collector Cutoff (Max) :

20μA

Length :

6.73mm

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Type :

NPN - Darlington

Terminal Form :

Gull wing

JESD-609 Code :

e3

Halogen Free :

Halogen Free

Emitter Base Voltage (VEBO) :

5V

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

25MHz

Contact Plating :

Tin

Number of Terminations :

2