MJD117-1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

Current Rating :

-2A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Surface Mount :

No

Height :

6.22mm

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

100V

Length :

6.73mm

Halogen Free :

Halogen Free

Pin Count :

4

Power Dissipation :

20W

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~150°C TJ

Number of Pins :

4

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

1.75W

Emitter Base Voltage (VEBO) :

5V

Published :

2006

Polarity :

PNP

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Max Collector Current :

2A

Element Configuration :

Single

Case Connection :

COLLECTOR

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

100V

Voltage - Rated DC :

-100V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

1

Transition Frequency :

25MHz

Width :

2.38mm

Collector Emitter Saturation Voltage :

2V

JESD-609 Code :

e3

Transistor Type :

PNP - Darlington

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Packaging :

Tube

Current - Collector Cutoff (Max) :

20μA

Lead Free :

Lead Free

Number of Terminations :

3

Frequency - Transition :

25MHz

Base Part Number :

MJD117

Collector Base Voltage (VCBO) :

100V

Continuous Collector Current :

2A

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99