MJD112-1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

1.75W

Max Collector Current :

2A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Width :

2.38mm

Collector Emitter Saturation Voltage :

2V

Mounting Type :

Through Hole

Pbfree Code :

yes

Transistor Type :

NPN - Darlington

Operating Temperature :

-65°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Radiation Hardening :

No

Max Power Dissipation :

20W

Voltage - Rated DC :

100V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

100V

Base Part Number :

MJD112

Contact Plating :

Tin

JESD-30 Code :

R-PSIP-T3

Number of Pins :

4

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Height :

6.22mm

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

100V

Surface Mount :

No

Transition Frequency :

25MHz

Factory Lead Time :

8 Weeks

Halogen Free :

Halogen Free

Length :

6.73mm

Element Configuration :

Single

Frequency - Transition :

25MHz

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

100V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

20μA

Current Rating :

2A

Polarity :

NPN

Continuous Collector Current :

2A

Published :

2005

Transistor Application :

SWITCHING

Packaging :

Tube

Number of Elements :

1

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pin Count :

4