MJD127TF
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- Mfr.Part #
- MJD127TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A TO252-3
- Stock
- 44,469
- In Stock ：
- 44,469
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Current Rating :
- -8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Power Dissipation :
- 1.75W
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- hFE Min :
- 1000
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Base Voltage (VCBO) :
- -100V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 8A
- Emitter Base Voltage (VEBO) :
- -5V
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 11 Weeks
- Height :
- 2.3mm
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -100V
- Collector Emitter Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Saturation Voltage :
- 2V
- Weight :
- 260.37mg
- Max Breakdown Voltage :
- 100V
- Terminal Form :
- Gull wing
- Polarity :
- PNP
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Length :
- 6.6mm
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Width :
- 6.1mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2013
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP - Darlington
- Max Power Dissipation :
- 1.75W
- Mount :
- Surface Mount
- Base Part Number :
- MJD127
- Datasheets
- MJD127TF
PNP - Darlington 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD127TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 4A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 8A volts.
MJD127TF Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
MJD127TF Applications
There are a lot of ON Semiconductor
MJD127TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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