MJD127T4
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- Mfr.Part #
- MJD127T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A DPAK
- Stock
- 4,426
- In Stock ：
- 4,426
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Voltage - Rated DC :
- -100V
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 3
- Max Power Dissipation :
- 1.75W
- Number of Terminations :
- 2
- Halogen Free :
- Halogen Free
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 100V
- Frequency - Transition :
- 4MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 8A
- Base Part Number :
- MJD127
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- yes
- Length :
- 6.73mm
- Polarity :
- PNP
- Height :
- 2.38mm
- Contact Plating :
- Tin
- Power Dissipation :
- 20W
- Transistor Type :
- PNP - Darlington
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-G2
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 4MHz
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Width :
- 6.22mm
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Saturation Voltage :
- 2V
- Published :
- 2005
- Current Rating :
- -8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Continuous Collector Current :
- 8A
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MJD127T4
MJD127T4 Documents
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PNP - Darlington -65°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD127T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 4A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 8A volts.
MJD127T4G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
MJD127T4G Applications
There are a lot of ON Semiconductor
MJD127T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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