MJD127G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency - Transition :

4MHz

Operating Temperature :

-65°C~150°C TJ

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Current Rating :

-8A

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

100V

Transistor Type :

PNP - Darlington

Pbfree Code :

yes

Mounting Type :

Surface Mount

Continuous Collector Current :

8A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

Max Collector Current :

8A

Voltage - Rated DC :

-100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Element Configuration :

Single

Number of Terminations :

2

Length :

6.73mm

Weight :

4.535924g

Power Dissipation :

1.75W

JESD-609 Code :

e3

Surface Mount :

yes

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Radiation Hardening :

No

Transition Frequency :

4MHz

Manufacturer Package Identifier :

CASE 369C ISSUE F

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Published :

2002

Base Part Number :

MJD127

Max Power Dissipation :

1.75W

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

100V

Height :

2.38mm

Width :

6.22mm

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Pin Count :

3

Collector Emitter Saturation Voltage :

2V

Collector Emitter Breakdown Voltage :

100V

Current - Collector Cutoff (Max) :

10μA