MJD122G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Halogen Free :

Halogen Free

Operating Temperature :

-65°C~150°C TJ

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

8A

Weight :

4.535924g

Collector Emitter Breakdown Voltage :

100V

Max Power Dissipation :

1.75W

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

Collector Base Voltage (VCBO) :

100V

Packaging :

Tube

Current - Collector Cutoff (Max) :

10μA

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

Number of Elements :

1

Transistor Type :

NPN - Darlington

Power Dissipation :

1.75W

Length :

6.73mm

Height :

2.38mm

Pbfree Code :

yes

Transistor Element Material :

SILICON

Max Collector Current :

8A

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Published :

2005

Element Configuration :

Single

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

2V

Case Connection :

COLLECTOR

Polarity :

NPN

hFE Min :

1000

Current Rating :

8A

Voltage - Rated DC :

100V

Frequency - Transition :

4MHz

Base Part Number :

MJD122

Transistor Application :

SWITCHING

Pin Count :

3

Number of Terminations :

2

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

4MHz

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Voltage (VCEO) :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Width :

6.22mm

Terminal Form :

Gull wing