MJD122-1
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- Mfr.Part #
- MJD122-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO251
- Stock
- 1,664
- In Stock ：
- 1,664
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 20W
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Max Collector Current :
- 8A
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Base Part Number :
- MJD122
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- NPN
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 2V
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Number of Terminations :
- 3
- Max Power Dissipation :
- 20W
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- hFE Min :
- 100
- Datasheets
- MJD122-1
NPN - Darlington 150°C TJ 10μA 1 Elements 3 Terminations SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
MJD122-1 Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 80mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.
MJD122-1 Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
MJD122-1 Applications
There are a lot of STMicroelectronics
MJD122-1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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