MJD117T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

1000

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Factory Lead Time :

8 Weeks

Max Power Dissipation :

1.75W

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Polarity :

PNP

Transistor Type :

PNP - Darlington

Voltage - Rated DC :

-100V

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

20μA

Element Configuration :

Single

Collector Base Voltage (VCBO) :

100V

Collector Emitter Voltage (VCEO) :

100V

Terminal Form :

Gull wing

Surface Mount :

yes

Power Dissipation :

20W

ECCN Code :

EAR99

Base Part Number :

MJD117

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

REACH SVHC :

No SVHC

Packaging :

Cut Tape (CT)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Frequency - Transition :

25MHz

Transition Frequency :

25MHz

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Case Connection :

COLLECTOR

Number of Pins :

3

Published :

2001

Number of Elements :

1

Length :

6.73mm

Terminal Finish :

Tin (Sn)

Emitter Base Voltage (VEBO) :

5V

Max Breakdown Voltage :

100V

Operating Temperature :

-65°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

2V

Width :

6.22mm

JESD-30 Code :

R-PSSO-G2

Max Collector Current :

2A

Continuous Collector Current :

2A

Radiation Hardening :

No

Mounting Type :

Surface Mount

Height :

2.38mm

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

100V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Current Rating :

2A