MJD117T4

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Mfr.Part #
MJD117T4
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS DARL PNP 2A 100V DPAK
Stock
13,407
In Stock :
13,407

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
Factory Lead Time :
8 Weeks
Base Part Number :
MJD117
Emitter Base Voltage (VEBO) :
5V
Number of Terminations :
2
Transistor Type :
PNP - Darlington
Radiation Hardening :
No
ECCN Code :
EAR99
Max Junction Temperature (Tj) :
150°C
Gain Bandwidth Product :
25MHz
Power Dissipation :
20W
Mount :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 2A 3V
Terminal Form :
Gull wing
Polarity :
PNP
Transistor Application :
SWITCHING
Pin Count :
3
VCEsat-Max :
3 V
Mounting Type :
Surface Mount
Collector Emitter Saturation Voltage :
3V
Current - Collector Cutoff (Max) :
20μA
Width :
6.2mm
Collector Base Voltage (VCBO) :
100V
hFE Min :
200
Length :
6.6mm
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
Max Breakdown Voltage :
100V
Current Rating :
-2A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
100V
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Case Connection :
COLLECTOR
Max Power Dissipation :
20W
Time@Peak Reflow Temperature-Max (s) :
30
Height :
2.63mm
Peak Reflow Temperature (Cel) :
260
Collector Emitter Breakdown Voltage :
-100V
Max Collector Current :
4A
REACH SVHC :
No SVHC
Number of Pins :
3
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PSSO-G2
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn) - annealed
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Voltage - Rated DC :
-100V
JESD-609 Code :
e3
Current - Collector (Ic) (Max) :
2A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
MJD117T4
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD117T4 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJD117, Number of Terminations:2, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, MJD117T4 pinout, MJD117T4 datasheet PDF, MJD117T4 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD117T4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD117T4


PNP - Darlington 150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD117T4 Overview


In this device, the DC current gain is 1000 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.

MJD117T4 Features


the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A


MJD117T4 Applications


There are a lot of STMicroelectronics
MJD117T4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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