MJD117G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Lead Free :

Lead Free

Voltage - Rated DC :

-100V

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Time@Peak Reflow Temperature-Max (s) :

40

Width :

6.22mm

Current Rating :

-2A

Pin Count :

3

Published :

2005

Halogen Free :

Halogen Free

Number of Elements :

1

Element Configuration :

Single

Case Connection :

COLLECTOR

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.75W

Collector Emitter Voltage (VCEO) :

100V

Base Part Number :

MJD117

Collector Emitter Saturation Voltage :

2V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

REACH SVHC :

No SVHC

Max Power Dissipation :

1.75W

Terminal Form :

Gull wing

Pbfree Code :

yes

Continuous Collector Current :

2A

Frequency - Transition :

25MHz

Height :

2.38mm

Factory Lead Time :

2 Weeks

Collector Emitter Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Transition Frequency :

25MHz

JESD-609 Code :

e3

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

20μA

Transistor Type :

PNP - Darlington

Packaging :

Tube

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Length :

6.73mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-65°C~150°C TJ

Max Collector Current :

2A

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

100V