KST10MTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Radiation Hardening :

No

Number of Elements :

1

Gain Bandwidth Product :

650MHz

Output Power :

350mW

Max Collector Current :

50mA

Collector Base Voltage (VCBO) :

30V

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Voltage - Rated DC :

25V

Factory Lead Time :

13 Weeks

Published :

2002

REACH SVHC :

No SVHC

Weight :

30mg

Mount :

Surface Mount

Length :

2.9mm

Collector Emitter Saturation Voltage :

500mV

Terminal Position :

Dual

Height :

960μm

Collector Emitter Voltage (VCEO) :

25V

JESD-609 Code :

e3

Frequency :

650MHz

Collector Emitter Breakdown Voltage :

25V

Pbfree Code :

yes

Number of Terminations :

3

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

3V

Current Rating :

4mA

Element Configuration :

Single

Transistor Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Surface Mount

hFE Min :

60

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Width :

1.3mm

Packaging :

Tape and Reel (TR)

Power Dissipation :

350mW

Terminal Form :

Gull wing

Max Breakdown Voltage :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector-Base Capacitance-Max :

0.7pF

Base Part Number :

KST10

Max Power Dissipation :

350mW

Transition Frequency :

650MHz

Polarity/Channel Type :

NPN

ECCN Code :

EAR99