KST10MTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

3V

Number of Elements :

1

Transition Frequency :

650MHz

Height :

960μm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Max Breakdown Voltage :

25V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Position :

Dual

Gain Bandwidth Product :

650MHz

Pbfree Code :

yes

Max Power Dissipation :

350mW

Number of Pins :

3

Max Operating Temperature :

150°C

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

500mV

Factory Lead Time :

13 Weeks

Collector Base Voltage (VCBO) :

30V

Output Power :

350mW

JESD-609 Code :

e3

Published :

2002

Lead Free :

Lead Free

Frequency :

650MHz

Collector Emitter Voltage (VCEO) :

25V

Weight :

30mg

Power Dissipation :

350mW

REACH SVHC :

No SVHC

Voltage - Rated DC :

25V

Current Rating :

4mA

Collector Emitter Breakdown Voltage :

25V

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Transistor Element Material :

SILICON

Width :

1.3mm

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

hFE Min :

60

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

50mA

Base Part Number :

KST10

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Number of Terminations :

3

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Length :

2.9mm

Collector-Base Capacitance-Max :

0.7pF

Terminal Form :

Gull wing