KST10MTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - Bipolar (BJT) - RF

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage (VCEO) :

25V

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Length :

2.9mm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Gain Bandwidth Product :

650MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

1.3mm

Collector Emitter Breakdown Voltage :

25V

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Max Power Dissipation :

350mW

Transition Frequency :

650MHz

Lead Free :

Lead Free

Transistor Type :

NPN

Max Breakdown Voltage :

25V

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

30V

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Frequency :

650MHz

Number of Terminations :

3

Output Power :

350mW

Base Part Number :

KST10

Emitter Base Voltage (VEBO) :

3V

ECCN Code :

EAR99

Weight :

30mg

Max Collector Current :

50mA

Collector Emitter Saturation Voltage :

500mV

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Published :

2002

JESD-609 Code :

e3

Power Dissipation :

350mW

Voltage - Rated DC :

25V

hFE Min :

60

Number of Elements :

1

Pbfree Code :

yes

Current Rating :

4mA

Height :

960μm

Collector-Base Capacitance-Max :

0.7pF

Number of Pins :

3