KST14MTF
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- Mfr.Part #
- KST14MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.3A SOT23-3
- Stock
- 14,512
- In Stock ：
- 14,512
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Published :
- 2002
- Max Collector Current :
- 300mA
- Collector Emitter Saturation Voltage :
- 1.5V
- Transistor Type :
- NPN - Darlington
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Elements :
- 1
- Weight :
- 30mg
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Polarity :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Current Rating :
- 300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Transition Frequency :
- 125MHz
- Lead Free :
- Lead Free
- Frequency - Transition :
- 125MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Operating Temperature :
- 150°C
- Voltage - Rated DC :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- AMPLIFIER
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 10V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 350mW
- hFE Min :
- 20000
- Base Part Number :
- KST14
- Factory Lead Time :
- 17 Weeks
- Mounting Type :
- Surface Mount
- Datasheets
- KST14MTF
NPN - Darlington 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST14MTF Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 300mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.
KST14MTF Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
KST14MTF Applications
There are a lot of ON Semiconductor
KST14MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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