KST13MTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Max Breakdown Voltage :

30V

Transition Frequency :

125MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Breakdown Voltage :

30V

JESD-609 Code :

e3

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Weight :

30mg

Voltage - Rated DC :

30V

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Published :

2008

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

30V

Max Power Dissipation :

350mW

Base Part Number :

KST13

Number of Terminations :

3

Polarity :

NPN

Frequency - Transition :

125MHz

Pbfree Code :

yes

hFE Min :

10000

Number of Elements :

1

Transistor Element Material :

SILICON

Transistor Type :

NPN - Darlington

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Number of Pins :

3

Collector Emitter Saturation Voltage :

1.5V

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Terminal Position :

Dual

Mount :

Surface Mount

Max Collector Current :

300mA

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

Emitter Base Voltage (VEBO) :

10V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Current Rating :

300mA

Factory Lead Time :

6 Weeks