KSP45TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

50

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

350V

Max Power Dissipation :

625mW

Terminal Position :

BOTTOM

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Factory Lead Time :

6 Weeks

Lead Free :

Lead Free

Published :

2007

Base Part Number :

KSP45

Current Rating :

300mA

Number of Terminations :

3

Transistor Element Material :

SILICON

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

350V

Collector Emitter Saturation Voltage :

750mV

Voltage - Rated DC :

350V

Max Collector Current :

300mA

Transistor Type :

NPN

Radiation Hardening :

No

Number of Pins :

3

JESD-609 Code :

e3

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

Max Breakdown Voltage :

350V

ECCN Code :

EAR99

Power Dissipation :

625mW

Packaging :

Tape and Box (TB)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Element Configuration :

Single

Mount :

Through Hole

Collector Base Voltage (VCBO) :

400V

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 10V

Vce Saturation (Max) @ Ib, Ic :

750mV @ 5mA, 50mA

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Emitter Base Voltage (VEBO) :

6V

Weight :

240mg

Mounting Type :

Through Hole

Polarity/Channel Type :

NPN