KSP43TA
- Mfr.Part #
- KSP43TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.5A TO92-3
- Stock
- 2,195
- In Stock :
- 2,195
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 200V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- Base Part Number :
- KSP43
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 50MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Voltage - Rated DC :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 200V
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 200V
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 18 hours ago)
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Packaging :
- Tape and Box (TB)
- JESD-609 Code :
- e3
- Weight :
- 240mg
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 200V
- Current Rating :
- 500mA
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Datasheets
- KSP43TA

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP43TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 200V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
KSP43TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP43TA Applications
There are a lot of ON Semiconductor
KSP43TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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