KSP42TA
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- Mfr.Part #
- KSP42TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92-3
- Stock
- 10,572
- In Stock ：
- 10,572
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 300V
- Element Configuration :
- Single
- Length :
- 4.58mm
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 50MHz
- Current Rating :
- 500mA
- Collector Base Voltage (VCBO) :
- 300V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 40
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 4.58mm
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Voltage - Rated DC :
- 300V
- Operating Temperature :
- 150°C TJ
- Weight :
- 240mg
- Number of Pins :
- 3
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 500mV
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Terminal Position :
- BOTTOM
- Published :
- 2002
- Base Part Number :
- KSP42
- Gain Bandwidth Product :
- 50MHz
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 3.86mm
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300V
- JESD-609 Code :
- e3
- Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- KSP42TA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP42TA Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 500mA volts is possible.
KSP42TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP42TA Applications
There are a lot of ON Semiconductor
KSP42TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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