KSP42TA
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- Mfr.Part #
- KSP42TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92-3
- Stock
- 32,140
- In Stock ：
- 32,140
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 300V
- Max Collector Current :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 50MHz
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Radiation Hardening :
- No
- Current Rating :
- 500mA
- Gain Bandwidth Product :
- 50MHz
- Height :
- 4.58mm
- Max Breakdown Voltage :
- 300V
- Operating Temperature :
- 150°C TJ
- Published :
- 2002
- JESD-609 Code :
- e3
- Length :
- 4.58mm
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Saturation Voltage :
- 500mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Packaging :
- Tape and Box (TB)
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 300V
- Base Part Number :
- KSP42
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 300V
- hFE Min :
- 40
- Width :
- 3.86mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Weight :
- 240mg
- Mount :
- Through Hole
- Frequency :
- 50MHz
- Pbfree Code :
- yes
- Datasheets
- KSP42TA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP42TA Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 500mA volts is possible.
KSP42TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP42TA Applications
There are a lot of ON Semiconductor
KSP42TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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